UltimateGaN is a European research project, which is funded by Ecsel JU. The aim of this project is the exploration of energy-saving components based on the new semiconductor material Gallium-Nitride (GaN). Due to the results, it should be possible to use these power semiconductors in several areas of application whereas the costs should be competitive with other technologies.

Possible interesting application areas for such chips are: renewable energies, e-mobility and fast data transfer.

The interests of the Institute of Microwave and Photonics Engineering are suitability and use of GaN-semiconductors for radio frequency power amplifiers. This results in two tasks for the institute as part of the project:

• Examinations of new package technologies and integration in PCBs: in this context, modeling, simulations, measurements and characterizations have to be carried out.
• Assembling a demonstrator for a radio frequency power amplifier with GaN-chips developed in the project for 5G and Radar applications below 5 GHz.